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CNBC AI News – June 2nd: Remember that buzz about producing 5nm chips without the holy grail of chipmaking, the EUV lithography machine? Well, the story is far from over.
We’re now hearing whispers of a “special” 5nm player forging a radically different path. This company is reportedly sidestepping the EUV requirement entirely. Their game plan? Employ a step-and-scan lithography system, leveraging multi-patterning to achieve those coveted 5nm linewidths.
The $64,000 question: can they make a leap to 3nm?
Latest reports indicate that this very same 5nm innovator has set its sights on a 3nm process technology for its application processors (APs), with a target launch year of 2025.
The chips are designed to leverage Gate-All-Around (GAA) technology, a key feature employed by industry giants like TSMC and Samsung in their cutting-edge processes. GAA is lauded for reducing current leakage and boosting performance.
However, this ambitious plan is already facing considerable skepticism. The market’s collective eyebrow is raised, questioning the feasibility of such an undertaking.
Their initial 5nm success was achieved through a workaround – sophisticated multi-patterning using deep ultraviolet (DUV) exposure systems.
Market analysts speculate a similar multi-patterning approach might be adopted for the 3nm process. However, the implications are significant. DUV-based multi-patterning, compared to EUV, inherently demands a far greater number of processing steps, inevitably impacting yield and production efficiency.
So, the real challenge, as always, boils down to whether they can truly master the high-stakes game of advanced chip manufacturing without EUV.
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Original article, Author: Tobias. If you wish to reprint this article, please indicate the source:https://aicnbc.com/1529.html
