Infineon Expands Gallium Nitride Wafer Production Amid TSMC Withdrawal

Infineon Technologies has successfully developed scalable Gallium Nitride (GaN) production on 12-inch wafers, a significant advancement over the current 200mm standard. This technology offers higher power density and efficiency, promising broader applications. The company will begin delivering samples in Q4 2025. Notably, TSMC is exiting the GaN wafer foundry market, leaving Infineon as a key player.

CNBC AI News, July 7th, 2025 – Infineon Technologies has achieved a significant milestone, successfully bringing its scalable Gallium Nitride (GaN) production technology on 12-inch (300mm) wafers to fruition. The semiconductor giant is slated to commence delivering initial samples to customers in the fourth quarter of 2025, signaling a new era in high-performance semiconductor manufacturing.

As a vertically integrated manufacturer (IDM), Infineon highlighted its strategic advantage in delivering products of superior quality, accelerating time-to-market, and offering unparalleled flexibility in design and development. This integrated approach is particularly crucial in the rapidly evolving GaN landscape.

Infineon’s technical prowess extends to mastering 300mm wafer production across three critical materials: Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). GaN semiconductors are revolutionizing the electronics industry, providing higher power density, faster switching speeds, and remarkably lower power loss. These inherent advantages translate into more compact designs, capable of significantly reducing the energy consumption and heat generation in a wide array of electronic devices, from smartphone chargers and solar inverters to industrial equipment and ambitious humanoid robotics projects.

Notably, Infineon stands as the pioneering semiconductor manufacturer to successfully develop 300mm GaN wafer technology utilizing existing infrastructure. This advancement represents a substantial leap forward from the current industry standard of 200mm wafers. The larger wafer diameter not only signifies a more sophisticated and efficient manufacturing process but also drastically boosts chip output, yielding up to 2.3 times more chips per wafer compared to its 200mm predecessor.

Adding a compelling dimension to this development, recent reports suggest that Taiwan Semiconductor Manufacturing Company (TSMC), the world’s leading contract chip manufacturer, is poised to exit the GaN wafer foundry market. Sources indicate that TSMC’s dedicated GaN production lines located in Hsinchu, Taiwan, will cease operations.

TSMC has confirmed these reports, stating that following a thorough evaluation, market conditions, and the company’s long-term business strategy have led to the decision to gradually phase out its GaN foundry business over the next two years. The company emphasized its commitment to working closely with its clients to ensure a smooth transition and orderly handover of business during this period.

TSMC Exits, Infineon Advances: Expanding GaN Wafer Production

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