CNBC AI News – In a move that could shake up the high-stakes world of mobile computing, Micron Technology has announced that it’s begun shipping samples of its groundbreaking 1γ (1-gamma) process node LPDDR5X memory. This cutting-edge technology, aiming to power the next generation of AI-driven flagship smartphones, marks a significant leap forward in memory performance and efficiency.
The 1γ node, representing the sixth generation of 10nm-class DRAM technology (often referred to as “1c DRAM” in South Korea’s semiconductor circles and featuring feature sizes in the 11-12 nanometer range), is poised to redefine the capabilities of mobile devices.
Micron’s 1γ node LPDDR5X memory currently stands as one of the most advanced low-power DRAM solutions available, specifically tailored for the demands of mobile devices.
Micron is currently providing 16GB LPDDR5X memory samples to select partners, with plans to roll out a comprehensive product portfolio ranging from 8GB to 32GB capacities in 2026, catering to the requirements of top-tier smartphones.
This LPDDR5X memory from Micron boasts an industry-leading speed of 10.7Gbps, alongside a reduction in power consumption of up to 20%.
Furthermore, to support the trend towards sleeker smartphones, Micron has engineered its LPDDR5X memory with the thinnest packaging in the industry, just 0.61 mm thick. That is 6% thinner than competitors, 14% slimmer than the previous generation.
Micron has highlighted in its press release that the 1γ node LPDDR5X represents its initial mobile memory solution incorporating Extreme Ultraviolet (EUV) lithography.
Meanwhile, Micron’s Korean rivals, Samsung and SK Hynix, are also ramping up their development efforts in 1c DRAM. SK Hynix completed mass production validation for its 1c DDR5 in January of this year, while Samsung has adjusted its development goal for its sixth-generation 10nm-class DRAM to June 2025. The race is on, and the mobile memory market is definitely one to watch.
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